Light-emitting device and manufacturing method thereof

ABSTRACT

A light-emitting device includes a light-emitting element, a wavelength conversion layer, a light pervious element and a light-reflecting enclosure. The light-emitting element includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element, and includes a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a recess structure and an outer wall. The light-reflecting enclosure surrounds the outer wall. The D50 of the wavelength conversion particles is not great than 10 μm. The recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patentapplication Ser. No. 15/395,917, filed on Dec. 30, 2016, which claimspriority to and the benefit of TW Application Number 104144374 filed onDec. 30, 2015, and the disclosure of which is incorporated by referencein its entirety.

BACKGROUND Technical Field

The present disclosure relates to a light-emitting device andmanufacturing method thereof, and in particular to a light-emittingdevice having a plurality of wavelength converting particles with smallparticle size and manufacturing method thereof.

Description of the Related Art

In the solid light emitting elements, light-emitting diodes (LEDs) havebetter energy efficient, low generating heat, longer life span, durablecompact, smaller volume and shorter response time. Therefore,light-emitting diodes have been adopted widely in demands for lightemitting elements within various fields, for instance, vehicles, homeappliances, and lighting lamps.

There are several approaches to convert the color of a light emittedfrom LEDs to another color. For example, one approach is having awavelength conversion layer, such as a phosphor layer, cover LEDs.Phosphor is a photoluminescence material and is also called a wavelengthconversion material. Phosphor can absorb first light from LEDs to emitsecond light different from the first light. If the first light is notabsorbed by the phosphor completely, the remaining first light can mixwith the second light to generate mixing light of different color.

In addition, in different view angles, if ratios of mixing the firstlight emitted from LEDs and the converted second light are different, adistribution of the color or the color temperature in mixing light canbe non-uniform.

SUMMARY OF THE DISCLOSURE

An embodiment of the application discloses a light-emitting device. Thelight-emitting device includes a light-emitting element, a wavelengthconversion layer, a light pervious element and a light-reflectingenclosure. The light-emitting element includes a top surface, a bottomsurface, and a side surface between the top surface and the bottomsurface. The wavelength conversion layer covers the top surface of thelight-emitting element and includes a plurality of wavelength conversionparticles having an equivalent particle diameter D50. The light perviouselement includes a recess structure and an outer wall. Thelight-reflecting enclosure surrounds the outer wall. The D50 of thewavelength conversion particles is not great than 10 μm. The recessstructure is laterally overlapped with the side surface of thelight-emitting element and the wavelength conversion layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross sectional view of a light-emitting device inaccordance with one embodiment of the present disclosure.

FIG. 1B is an enlarged view of the dashed circle in FIG. 1A.

FIG. 1C is the divergence of the color coordinate as a function of theangle of view in accordance with one embodiment of the presentdisclosure.

FIGS. 2A-2J illustrate a manufacturing flow of the light-emitting devicein accordance with one embodiment of the present disclosure.

FIGS. 3A-3F illustrate a manufacturing flow of the light-emitting devicein accordance with another embodiment of the present disclosure.

FIG. 4 is a cross-sectional view of a light-emitting device inaccordance with another embodiment of the present disclosure.

FIG. 5 is a cross-sectional view of a light-emitting device inaccordance with another embodiment of the present disclosure.

FIG. 6 is a cross-sectional view of a light-emitting device inaccordance with another embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

To better and concisely explain the disclosure, the same name or thesame reference numerals given or appeared in different paragraphs orfigures along the specification should has the same or equivalentmeanings while it is once defined anywhere of the disclosure. Inaddition, these drawings are not necessarily drawn to scale. Likewise,the relative sizes of elements illustrated by the drawings may differfrom the relative sizes depicted.

The following shows the description of embodiments of the presentdisclosure in accompany with the drawings.

FIG. 1A is a cross sectional view of a light-emitting device 100 inaccordance with one embodiment of the present disclosure. Referring toFIG. 1A, the light-emitting device 100 includes a light-emitting element120, a wavelength conversion layer 140 and a light pervious element 160.The wavelength conversion 140 covers a part of surfaces of thelight-emitting element 120. Furthermore, the light pervious element 160is located on the wavelength conversion 140.

In an embodiment, the light-emitting element 120 includes a growthsubstrate 122, a light-emitting structure 124 stacked by layers, andelectrical contacts 126 a and 126 b. Moreover, a side of thelight-emitting structure 124 is connected to the growth substrate 122.Another side is connected to the electrical contacts 126 a and 126 b.Furthermore, the light-emitting element 120 includes a top surface 121,a bottom surface 123 opposite to the top surface 122, and a plurality ofside surfaces 125. The top surface 121 is connected to the bottomsurface 123 by the side surfaces 125. In an embodiment, thelight-emitting element 120 is a flip chip LED die. In anotherembodiment, the growth substrate 122 can be sapphire for light-emittingstructure 124 being epitaxially grown on. Moreover, the growth substrate122 has an outer surface for a light extracting surface like the topsurface 121 of the light-emitting element 120. The growth substrate 122should not be limited to what is disclosed in the present disclosureherein. In another embodiment, the growth substrate 122 can be removedor replaced by other substrate (different material, different structureor different shape) in the back-end process of the manufacture of thelight-emitting device 100. In an embodiment, the light-emittingstructure 124 includes a first semiconductor layer, an active layer, anda second semiconductor layer (not shown). In an embodiment, the firstsemiconductor layer can be an n-type semiconductor layer and the secondsemiconductor layer can be a p-type semiconductor layer. In anembodiment, electrical contacts 126 a and 126 b are disposed on the sameside of the light-emitting element 120 as an interface to connectelectrically the light-emitting element 120 and an external power.Moreover, outer surfaces of electrical contacts 126 a and 126 b are alsoa part of the bottom surface 123, and electrical contacts 126 a and 126b can be electrically connected to the first semiconductor layer and thesecond semiconductor layer respectively. Electrical contacts 126 a and126 b can be both extended to an elevation higher than a bottom surfaceof the wavelength conversion layer 140, to an elevation closer to thebottom surface (not shown), or only one contact is extended to anelevation higher than the bottom surface (not shown). In anotherembodiment, the light-emitting element 120 can be a vertical LEDdie/chip with electrical contacts 126 a and 126 b arranged on the twoopposite sides of the LED die/chip, and electrical contacts 126 a and126 b can be electrically connected to the first semiconductor layer andthe second semiconductor layer respectively.

In an embodiment, the light-emitting element 120 includes four sidesurfaces 125 wherein the opposite side surfaces are parallel to eachother. In the other word, the appearance of the light-emitting element120 is rectangle or parallelogram. The top surface 121 is substantiallyparallel to the bottom surface 123. The light-emitting element 120 canbe an LED die/chip, such as blue LED die/chip or UV LED die/chip. In oneembodiment, the light-emitting element 120 is a blue LED die/chip whichcan emit a light having a dominant wavelength or a peak wavelength inthe range of 410 nm and 490 nm.

The wavelength conversion layer 140 can include a transparent binder 142and a plurality of wavelength conversion particles 144 dispersed withinthe transparent binder 142. The wavelength conversion particles 144 canabsorb first light from the light-emitting element 120 to emit secondlight with different spectrum. In one embodiment, the wavelengthconversion particles 144 absorb first light, such as blue light or UVlight, and then convert to second light, for example, yellow light witha dominant wavelength or a peak wavelength in the range of 530 nm and590 nm. In another embodiment, the wavelength conversion particles 144absorb first light, such as blue light or UV light, and then convert tosecond light like yellowish green light with a dominant wavelength or apeak wavelength in the range of 515 nm and 575 nm. In anotherembodiment, the wavelength conversion particles 144 absorb first light,such as blue light or UV light, and then convert to second light likered light with a dominant wavelength or a peak wavelength in the rangeof 590 nm and 650 nm.

The wavelength conversion layer 140 can include single or various kindsof wavelength conversion particles 144. In one embodiment, thewavelength conversion layer contains the wavelength conversion particles144 capable of emitting yellow light. In another embodiment, thewavelength conversion layer 140 has many kinds of wavelength conversionparticles 144 capable of emitting yellowish green light and red light.

The wavelength conversion particles 144 can be dispersed in thetransparent binder 142, which can fix relative positions between thewavelength conversion particles 144 and conduct heat from the wavelengthconversion particles 144. The concentration of the wavelength conversionparticles 144 in the wavelength conversion layer 140 can be changed byadjusting weight ratios of the transparent binder 142 and the wavelengthconversion particles 144. The higher the concentration of the wavelengthconversion particles 144 is, the more the light in the light-emittingelement 120 is converted to a different light, which means higherconversion ratio. Furthermore, in one embodiment, a weight ratio of thewavelength conversion particles 144 to the wavelength conversion layer140 is higher, and the effect of scattering light is more obvious whilea weight ratio of the wavelength conversion particles 144 to thewavelength conversion layer 140 is less than 70%. If the concentrationof the wavelength conversion particles 144 is too high, there is nosufficient transparent binder 142 to sustain the wavelength conversionparticles 144. In one embodiment, a weight ratio of the wavelengthconversion particles 144 to the wavelength conversion layer 140 is lessthan 70%. In another embodiment, a weight ratio of the wavelengthconversion particles 144 to the wavelength conversion layer 140 is inthe range of 30% and 60%. The wavelength conversion particles 144 withthe weight ratio of the above-mentioned range can provide a betterconversion ratio and scattering effect and can be fixed effectively inthe position. In addition, the transparent binder 142 can have a highertransparency, such as 80%, 90%, 95% or 99% transparency so that thefirst light exciting the wavelength conversion particles 144 and thesecond light emitted from the wavelength conversion particles 144 havehigher light extraction efficiency.

The transparent binder 142 can be a thermosetting resin, for example, asilicone resin or an epoxy resin. In an embodiment, the transparentbinder 142 is silicone resin. Moreover, a composition of the siliconeresin can be adjusted depending on the demands of physical properties oroptical properties. In one embodiment, the transparent binder 142contains aliphatic silicone, such as methyl siloxane, with a greaterductility so as to sustain thermal stress from the light-emittingelement 120. In another embodiment, the transparent binder 142 hasaromatic silicone, such as phenyl siloxane, with a higher refractiveindex so as to increase light extraction efficiency. When a differenceof refractive indices between the transparent binder 142 and a materialin an output-light portion of the light-emitting element 120 is smaller,an angle of output light is greater so that light extraction efficiencycan be increased. In one embodiment, the material of the output-lightportion of the light-emitting element 120 is sapphire which has arefractive index of about 1.77 while the transparent binder 142 is madeof aromatic silicone with a refractive index of about 1.50.

Particle sizes of the wavelength conversion particles can be designatedas D50, which is defined by the particle diameter of the particleintercepting 50% of the cumulative mass in a distribution of thewavelength conversion particles 144. In one embodiment, the D50 of thewavelength conversion particles is not greater than 10 μm. In anotherembodiment, the D50 of the wavelength conversion particles is in therange of 1 μm to 8 μm. When the wavelength conversion particles 144 isgreater than 10 μm, the wavelength conversion particles 144 scatteringthe first light and second light is not sufficient so that mixing thefirst light and the second light is not good. Therefore, a colordistribution of the mixed light is not uniform under different viewangle. When the D50 of the wavelength conversion particles 144 is lessthan 1 μm, the wavelength conversion efficiency thereof is lower.Therefore, an amount of the wavelength conversion particles 144 has tobe added more so the wavelength conversion particles 144 have anexcessive scattering to cause energy loss from light moving in thetransparent binder 142. In one embodiment, when the weight percentage ofthe wavelength conversion particles 144 to the wavelength conversionlayer 140 is less than 70% and the D50 thereof is in the range of 1 μmto 8 μm, the wavelength conversion particles 144 has a better lightscattering.

Material of the wavelength conversion particles 144 can includeinorganic phosphor, organic fluorescent colorants, semiconductors, orcombinations thereof. The semiconductor material includes crystal sizein a nano-scale thereof, such as quantum dot luminescent material. Inone embodiment, the material of the wavelength converting particles 144is phosphor, which can be Y₃Al₅O₁₂:Ce, Gd₃Ga₅O₁₂:Ce, (Lu, Y)₃Al₅O₁₂:Ce,Tb₃Al₅O₁₂:Ce, SrS:Eu, SrGa₂S₄:Eu, (Sr, Ca, Ba)(Al, Ga)₂S₄:Eu, (Ca,Sr)S:(Eu, Mn), (Ca, Sr)S:Ce, (Sr, Ba, Ca)₂Si₅N₈:Eu, (Sr, Ba, Ca)(Al,Ga)Si N₃:Eu, CaAlSiON:Eu, (Ba, Sr, Ca)₂SiO₄:Eu, (Ca, Sr, Ba)Si₂O₂N₂:Eu,K₂SiF₆:Mn, K₂TiF₆:Mn, and K₂SnF₆:Mn. The semiconductor material caninclude II-VI semiconductor compound, III-V semiconductor compound,IV-VI semiconductor compound, or combinations thereof. The quantum dotluminescent material can be ZnS, ZnSe, ZnTe, ZnO, CdS, CdSe, CdTe, GaN,GaP, GaSe, GaSb, GaAs, AlN, AlP, AlAs, InP, InAs, Te, PbS, InSb, PbTe,PbSe, SbTe, ZnCdSeS, and CuInS.

The thicknesses T, T1, and T2 of the wavelength conversion layer 140 andthe particle size thereof can jointly affect the light-emittingperformance of the light-emitting device 100. In one embodiment, thethickness T1 of the wavelength conversion layer 140 is greater than thethickness T2. In another embodiment, the thickness T1 of the wavelengthconversion layer 140 is substantially equal to the thickness T2. In oneembodiment, a ratio of the average thickness T of the wavelengthconversion layer to the D50 of the wavelength conversion particles is inthe range of 6 to 20 while the average thickness T is defined as theaverage of the thickness T1 and the thickness T2. In another embodiment,a ratio of the average thickness T of the wavelength conversion layer tothe D50 of the wavelength conversion particles is in the range of 8 to15. With the same amount of the wavelength conversion particles, thedensity of the wavelength conversion particles 144 is too high when aratio of the average thickness T of the wavelength conversion layer tothe D50 of the wavelength conversion particles is less than 6. In thatcase, it is difficult for the first light and second light in thewavelength conversion 140 to exit because substantial portions of thefirst light and the second light are scattered by the wavelengthconversion particles 144 in the wavelength conversion layer 140. Incontrast, a ratio of the average thickness T of the wavelengthconversion layer to the D50 of the wavelength conversion particles isgreater than 20 so as to decrease brightness because the first light andthe second light have larger routes in the transparent binder 142 thatmay cause energy loss. In one embodiment, the D50 of the wavelengthconversion particles is in the range of 2.5 μm to 4 μm, the averagethickness T of the wavelength conversion layer is in the range of 35 μmto 50 μm, and a weight percentage of the wavelength conversion particles144 to the wavelength conversion layer 140 is in the range of 35% and60% so a ratio of the average thickness T of the wavelength conversionlayer to the D50 of the wavelength conversion particles is in the rangeof 8.75 to 20.

In one embodiment, the thickness T1 of the wavelength conversion layer140 is close to the thickness T2 thereof, and the difference between thethickness T1 and the thickness T2 is not greater than 10% of the averageof the thickness T2 and the thickness T1. Moreover, the differencebetween the maximum thickness of the wavelength conversion layer 140 andthe average of the thickness, and/or the difference between the minimumthickness thereof and the average of the thickness is not greater than10% of the average of the thickness. Therefore, the distances for thefirst light and the second light passing through the wavelengthconversion layer 140 are as close as possible.

The wavelength conversion layer 140 can cover one or more lightextracting surfaces of the light-emitting element 120. In oneembodiment, the light extracting surfaces of the light-emitting element120 include a top surface 121 and a side surface 125. In one embodiment,the wavelength conversion layer 140 directly contacts the top surface121 and a plurality of side surfaces 125 of the light-emitting element120. In another embodiment, the wavelength conversion layer 140 coversor directly contacts only the top surface 121, but not covers or notdirectly contacts the side surfaces 125. In one embodiment, in additionto covering the light-emitting element 120, the wavelength conversionlayer 140 extends outward the side surface 125 of the light-emittingelements to form an extending portion 143. In another embodiment, thewavelength conversion layer 140 only covers the light-emitting element120.

Referring to FIG. 1B, the wavelength conversion layer 140 comprises anupper section and a bottom section separated by a virtual line L1 whichlocates in the middle of the thickness T1. The difference between theaverage of particle sizes of the wavelength conversion particles 144 inthe upper section and the average of particle sizes of the wavelengthconversion particles 144 in the bottom section is smaller than 10%. Ashape of the wavelength conversion particles 144 can be regular orirregular. The regular shape includes circular or ellipse. The irregularshape includes asymmetric shape. An average of particle sizes of thewavelength conversion particles 144 is defined by the average of themaximum particle size and the minimum particle size.

Referring to FIG. 1A, the light pervious element 160 is formed on thelight-emitting element 120 and the wavelength conversion layer 140 so asto protect the light-emitting element 120 and the wavelength conversionlayer 140. Furthermore, the light pervious element 160 has an outermostsurface as a light extracting surface of the light-emitting device 100.Besides providing protection to the light-emitting element 120, thelight pervious element 160 also provides support to the light-emittingdevice 100. In an embodiment, the light pervious element 160 has a lightpervious adhesive layer 162 and a light pervious substrate 164. Thematerial of the light pervious adhesive layer 162 can depend on thematerial of the light pervious substrate 164, such as silicone resin orepoxy resin. In an embodiment, the light pervious substrate 164 is glassand the light pervious adhesive layer 162 is silicone resin. The lightpervious substrate 164 is rigid enough to supply support to thelight-emitting device 100. A material of the light pervious substrate164 can be glass or fused quartz. In an embodiment, the wavelengthconversion layer 140 has a refractive index in the range of 1.45 to1.80. In an embodiment, the light pervious adhesive layer 162 has arefractive index in the range of 1.40 to 1.60. In an embodiment, thelight pervious substrate 164 has a refractive index in the range of 1.45to 1.90. The refractive index of the light pervious adhesive layer 162can be the same as or different from the light pervious substrate 164.In an embodiment, the refractive index of the light pervious adhesivelayer 162 is greater than the light pervious substrate 164 and betweenthe wavelength conversion layer 140 and the light pervious substrate164.

Referring to FIG. 1A, a lower surface of the extending portion 143 ofthe wavelength conversion layer 140 and the bottom surface 123 can becovered by the light-reflecting layer 180. The light-reflecting layer180 can reflect the first light and the second light directing to thelight extracting surface. In an embodiment, the extending portion 143 ofthe wavelength conversion layer 140 directly contacts thelight-reflecting layer 180. When the light-reflecting layer 180 isconnected to the extending portion 143 of the wavelength conversionlayer 140, the wavelength conversion layer 140 in the light-emittingdevice 100 has higher bonding strength so as to decrease a risk ofpeeling of the wavelength conversion layer 140. The light-reflectinglayer 180 can be made by light-reflecting and non-conductive material.In one embodiment, the light-reflecting material can be TiO₂, ZrO₂,Nb₂O₅, Al₂O₃, SiO₂, MgF₂ or AlN. In another embodiment, thelight-reflecting material is formed of mixing the particle ofabove-mentioned material and binding agent. The binding agent can besilicone resin, acrylic resin or epoxy resin.

Referring to FIG. 1A, lower surfaces of electrical contacts 126 a and126 b can be covered by extension pads 150 a and 150 b (collectivelynumbered 150) respectively. In an embodiment, the extension pads 150 aand 150 b cover the electrical contacts 126 a, 126 b and a portion ofthe light-reflecting layer 180. As the figure shows, the extension pads150 a and 150 b extend inward to close to each other, and extend outwardto a position before reaching the outer boundary of the light-reflectinglayer 180. However, the extension pads 150 a and 150 b can also extendto the outer boundary of the light-reflecting layer 180 (not shown). Inan embodiment, the surface area of the extension pad 150 a is greaterthan the surface area of the electrical contact 126 a and/or the surfacearea of the extension pad 150 b is greater than the surface area of theelectrical contact 126 b. In one embodiment, the thickness of thelight-reflecting layer 180 is greater than the respective thickness ofthe electrical contacts 126 a and 126 b. When the extension pads 150 a,150 b extend to upside of the light-reflecting layer 180 from theelectrical contacts 126 a and 126 b, the extension pads 150 a, 150 brespectively forms an inclined plane 150 a′, 150 b′ because of a gapbetween the light-reflecting layer 180 and the electrical contact 126.In another embodiment, the electrical contacts 126 a and 126 b have acoplanar (not shown) with the light-reflecting layer 180 so there is noinclined plane. Extension pads 150 a, 150 b are made of highelectrically conductive material, such as Cu, Ag or Au. In anembodiment, the extension pads 150 a, 150 b can be formed byelectroplating.

FIG. 1C illustrates the divergence of the color coordinate as a functionof the angle of view in accordance with one embodiment of the presentdisclosure in FIG. 1A. The coordinate X indicates the angle of view.Furthermore, 0° is corresponding to a direction vertical to the topsurface 121. 90° and −90° are respectively corresponding to two oppositedirections parallel to the top surface 121. A u′v′ shown on coordinatesY indicates the distance between an arbitrary point (target point) and areference point (u₀′, v₀′) on the CIE1976 color space. In other words,the lager Au′v′ means the distance between the target point and thereference point is lager and the mixing ratio of the first light and thesecond light has larger difference with the average value. Au′v′=(Δu′²+Δv′²)^(1/2), Δu′=u′−u₀′, Δv′=v′−v₀′, u′ and v′ indicate thecolor coordinates of the target point on the CIE1976 color space. Thereference point (u₀′, v₀′) is defined as the average value of the colorcoordinates over all angles of the emitted light.

In the angle distribution, less variation of Δu′v′ means the colordistribution over different angle of view is more uniform. In oneembodiment, the difference of Δu′v′ is less than 0.0040 in the colordistribution over the angle of view ranged from 0° to 70° in thelight-emitting device. In FIG. 1C, the difference of Δu′v′ is less than0.0030 over the range of 0° to 70° angle (or 0° to −70°). In FIG. 1C,the difference of Au′v′ is less than 0.0015 over the range of 0° to 30°angle (or 0° to)−30°. Moreover, in FIG. 1C, the difference of Au′v′ isless than 0.0020 over the range of 30° to 70° angle (or −30° to −70°).

FIG. 2A˜FIG. 2J illustrate a manufacturing flow of the light-emittingdevice 100 in accordance with one embodiment of the present disclosure.Referring to FIG. 2A, a temporary carrier 220, light-emitting elements120 a, 120 b, and an adhesive layer 240 for fixing the light-emittingelements 120 a, 120 b on the temporary carrier 220 are provided. Thenumber of the light-emitting elements is an example and is not limitedto two. In one embodiment, the temporary carrier 220 can be glass,sapphire substrate, metal plate or plastic plate, and the adhesive layer240 can be UV curing adhesive.

Referring to FIG. 2B, a wavelength conversion sheet 140′ is formed onthe temporary carrier 220 and covers the light-emitting elements 120 aand 120 b. The wavelength conversion sheet 140′ is a sheet structureformed beforehand which is mixed by the plurality of wavelengthconversion particles and the transparent adhesive. The size of the sheetstructure can be adjusted based on the requirement, for example, thesheet structure is formed by the plurality of wavelength conversionsheets, and each of the wavelength conversion sheets is separated fromeach other. The plurality of separated wavelength conversion sheetscovers the plurality of light-emitting elements correspondingly as abatch or in order. That is to say, one of the wavelength conversionsheets 140′ covers only one or few light-emitting elements. For example,the quantity ratio of the light-emitting elements being covered to alllight-emitting elements disposed on the temporary carrier 220 is smallerthan 1/50, 1/100, or 1/200. In another embodiment, the sheet structureis formed as a tape which can continuously cover the plurality oflight-emitting elements in one step. In other words, one wavelengthconversion sheet 140′ can cover multiple or all light-emitting elements.For example, the quantity ratio of the light-emitting elements beingcovered on the temporary carrier 220 to all light-emitting elementsdisposed on the carrier 220 is more than 1/50, 1/100, or 1/200. In anembodiment, the wavelength conversion sheet 140′ is laminated on the topof the light-emitting elements 120 a and 120 b. The lamination is madeby tightly sealing an upper mold (the wavelength conversion sheet can bedisposed on the upper mold; not shown) and a lower mold (thelight-emitting element can be disposed on the lower mold; not shown),and heating and pressuring the wavelength conversion sheet 140′ at thesame time to soften the wavelength conversion sheet 140′ so thelight-emitting elements 120 a, 120 b can be connected tightly.Alternatively, the air is extracted out when the upper mold is veryclose to the lower mold and the wavelength conversion sheet 140′ doesnot contact the light-emitting elements 120 a, 120 b. The air bubblebetween the wavelength conversion sheet 140′ and the light-emittingelements 120 a, 120 b can be eliminated so that the bonding strength canbe enhanced. In an embodiment, the wavelength conversion sheet 140′further includes a substrate (not shown) to support the wavelengthconversion sheet 140′. In one embodiment, the substrate has a worseflexible, and that is why the substrate have to be removed beforehand sothe wavelength conversion sheet 140′ is laminated tightly on thelight-emitting elements 120 a, 120 b by extracting air afterward. Inanother embodiment, the substrate has a better flexible. Therefore, itis not necessary to remove the substrate beforehand. After laminatingthe wavelength conversion sheet 140′ on the light-emitting elements 120a, 120 b by extracting air, the substrate can be removed. Material ofthe substrate can be polymer, such as polyethylene or polyester.

Referring to FIG. 2C, a light pervious adhesive 162′ is formed on thewavelength conversion sheet 140′. In one embodiment, by molding, heatingand pressing the light pervious adhesive 162′ can cover the top surfaceof the wavelength conversion sheet 140′ and fill in the concave portionbetween the light-emitting elements 120 a and 120 b. In anotherembodiment, the other way of forming the light pervious adhesive 162′includes coating or laminating. In an embodiment, the light perviousadhesive 162′ is of semi-curing state and also called B-stage adhesive.

Referring to FIG. 2D, a light pervious substrate 164′ is formed on andadhered to the light pervious adhesive 162′. In an embodiment, the lightpervious substrate 164′ is adhered to the light pervious adhesive 162′by heating. An adhering temperature is greater than 140° C. In anotherembodiment, the light pervious adhesive 162′ is connected to thewavelength conversion sheet 140′ and the light pervious substrate 164′and is transformed to curing state, or called c-stage adhesive, afterheating. Because the adhering temperature between the light pervioussubstrate 164′ and the light pervious adhesive 162′ is greater than 140°C., the adhesive layer 240 has to withstand the temperature above 140°C. to prevent from thermal decomposition which damage the function offixing of the light-emitting elements 120 a, 120 b and the temporarycarrier 220. In one embodiment, the adhesive layer 240 is heat-resistantUV curing adhesive.

Referring to FIG. 2E, by a separation process, the light-emittingelements 120 a, 120 b, the wavelength conversion sheet 140′ stackedthereon, light pervious adhesive 162′ and the light pervious substrate164′ are separated. The wavelength conversion sheet 140′ is transformedto wavelength conversion layers 140 a, 140 b after the separationprocess. The light pervious adhesive 162′ is transformed to lightpervious layers 162 a, 162 b after the separation process. Moreover, thelight pervious substrate 164′ is transferred to light pervious substrate164 a, 164 b after the separation process. The separation processincludes cutting the light pervious substrate 164′, the light perviousadhesive 162′ and the wavelength conversion sheet 140′ in order by thecutting tool 260. The step of cutting can be one time or multiple times.In one embodiment, the multiple-time cutting means cutting the lightpervious substrate 164′ by the cutting tool beforehand and cutting thelight pervious adhesive 162′ and the wavelength conversion sheet 140′ byanother cutting tool afterward.

Referring to FIG. 2F, the stickiness of the adhesive 240 decreases ordisappears by supplying energy, such as irradiating energy or thermalenergy. In one embodiment, the adhesive 240 is UV curing adhesive, andthe temporary 220 is transparent material, such as glass, sapphiresubstrate and so on. In the embodiment, UV light is emitted from thedirection of the temporary carrier to cure the UV curing adhesive 240′and then the stickiness of the UV curing adhesive 240′ is decreased.Referring to FIG. 2G, the light-emitting devices 100 a′, 100 b′ arepicked up after curing the UV curing adhesive 240′.

In accordance with one embodiment of FIG. 1A, the light-reflecting layer180 and the extension pad 150 yet have to be formed on the bottomsurfaces of the light-emitting elements 120 a, 120 b. Referring to FIG.2G, the light-emitting devices 100 a, 100 b are adhered to anothertemporary carrier 280 by an adhesive 270 after reversing thelight-emitting devices 100 a, 100 b. Furthermore, the light pervioussubstrates 164 a, 164 b are fixed by the adhesive 270. Light-reflectinglayers 180 a, 180 b are respectively formed around electrical contacts126 a 1, 126 a 2 of the light-emitting element 120 a and electricalcontacts 126 b 1, 126 b 2 of the light-emitting element 120 b. Thelight-reflecting layers 180 a, 180 b can bulge or coplanar with theelectrical contacts 126 a 1, 126 a 2 and 126 b 1, 126 b 2. Thelight-reflecting layers 180 a, 180 b can be formed by screen-printing orlithography.

Referring to FIG. 2I, extension pads 150 a 1, 150 a 2 and 150 b 1, 150 b2 are formed on the electrical contacts 126 a 1, 126 a 2 and 126 b 1,126 b 2, respectively. In an embodiment, the extension pads 150 a 1, 150a 2 and 150 b 1, 150 b 2 are formed by electroplating. If thelight-reflecting layer 180 and/or the extension pad 150 are notrequired, the step of FIG. 2G and/or FIG. 2I can be omitted.

Referring to FIG. 2J, in one embodiment, the light-emitting devices 100a, 100 b are reversed afterward being adhered to another temporarycarrier 290. The temporary carrier 290 can be blue film. In anotherembodiment, the light-emitting devices 100 a, 100 b can be picked andplaced in the rolled tape in order.

FIGS. 3A-3F illustrate a manufacturing flow of the light-emitting device100 in accordance with another embodiment of the present disclosure. Thesteps prior to FIG. 3A can be the same as or similar with those in FIG.2A to FIG. 2C. FIG. 3A can be the same as or the similar with FIG. 2D.

Referring to FIG. 3B, another temporary carrier 350 are provided andattached to the other side of the light pervious substrate 164′. Thetemporary carrier 350 has an adhesive layer (not shown) so as to fix thelight pervious substrate 164′ on the temporary carrier 350. Referring toFIG. 3C, the stickiness of the adhesive layer 340 is decreased ordisappears to form a post adhesive layer 340′ with energy providedthereto. The structures, functions and making methods of the adhesivelayer 340 can refer to previous description.

Referring to FIG. 3D, the post adhesive layer 340′ is separated from thelight-emitting elements 120 a, 120 b. Simultaneously, the light-emittingelements 120 a, 120 b expose the electrical contacts 126 a 1, 126 a 2and 126 b 1, 126 b 2, respectively. Referring to FIG. 3E, alight-reflecting layer 180′ and the extension pads 150 a 1, 150 a 2 and150 b 1, 150 b 2 are formed in order. The structures, functions andmaking methods of the light-reflecting layer 180′ and the extension pads150 a 1, 150 a 2 and 150 b 1, 150 b 2 can refer to previous description.

Referring to FIG. 3F, the light-reflecting layer 180′, the wavelengthconversion sheet 140′, the light pervious adhesive 162′, the lightpervious substrate 164′ are all severed by the separation process. Thelight-reflecting layer 180′ is transformed to light-reflecting layers180 a, 180 b, the wavelength conversion sheet 140′ is transformed towavelength conversion layer 140 a, 140 b, and the light perviousadhesive 162′ is transformed to light pervious adhesive layers 162 a,162 b, and the light pervious substrate 164′ is transformed to lightpervious substrates 164 a, 164 b. In one embodiment, the separationprocess includes cutting for multiple times by the cutting tools. Forexample, the light-reflecting layer 180′, the wavelength conversionsheet 140′, and the light pervious adhesive 162′ are cut by the firstcutting tool, and then the light pervious substrate 164′ is cut by thesecond cutting tool. In another embodiment, the light-reflecting layer180′, the wavelength conversion sheet 140′, the light pervious adhesive162′, the light pervious substrate 164′ are all cut by one cutting toolat one time.

FIG. 4 is a cross-sectional view of a light-emitting device 400 inaccordance with another embodiment of the present disclosure. Thelight-emitting device 400 includes a light-emitting element 420, awavelength conversion layer 440, a light pervious element 460 and alight-reflecting enclosure 480. The wavelength conversion layer 440covers a part of the surface of the light-emitting element 420. Inaddition, the light pervious element 460 is arranged on the wavelengthconversion layer 440. The light-reflecting enclosure 480 surrounds sidesurfaces of the light-emitting element 420.

The structures, functions and making methods of the light-emittingelement 420, the wavelength conversion layer 440 and the light perviouselement 460 can refer to the paragraphs related with FIG. 1. Thematerial of the reflecting enclosure 480 can be the same as or thesimilar with the light-reflecting layer 180. Furthermore, making methodsof the light-reflecting enclosure 480 can be molding or laminating thelight-reflecting sheet. In one embodiment, the wavelength conversionlayer 440 covers the top surface of the light-emitting element 420 andextends to a portion above the top surface of the light-reflectingenclosure 480. In another embodiment, the wavelength conversion layer440 is a flat and non-bending structure so the wavelength conversionlayer 440 does not have a stress in the bending portion to decrease arisk of the crack by the stress. In an embodiment, the light-emittingdevice 400 further includes electrical pads 450 a, 450 b electricallyconnecting to the light-emitting element 420 and surrounded by thelight-reflecting enclosure 480. Electrical pads 405 a, 450 b can bemetal or alloy with high conductivity, such as Cu.

FIG. 5 is a cross-sectional view of a light-emitting device 500 inaccordance with another embodiment of the present disclosure. Thelight-emitting device 500 includes a light-emitting element 520, awavelength conversion layer 540, a light pervious element 560, a lightpervious cover layer 570 and a light-reflecting enclosure 580. The sameparts with the embodiments of FIG. 1 or/and FIG. 4 can refer to theabove-mentioned description, but the different part includes the lightpervious cover layer 570 surrounds the side surface of thelight-emitting element 520. In an embodiment, the light pervious coverlayer 570 covers the side surface of the light-emitting element 520 andcontacts a surface of the wavelength conversion layer 540. In addition,a surface of the light pervious cover layer 570 contacts thelight-reflecting enclosure 580. In one embodiment, a thickness of thelight pervious cover layer 570 is getting thinner from the direction ofthe wavelength conversion layer 540 to the electrical pads 550 a, 550 b.Moreover, the light-reflecting enclosure 580 has a slanted inner surfaceso as to form a space which has a bigger upper portion and a smallerbottom portion to place the light-emitting element 520. Therefore, whenthe light-emitting element 520 emits a light from the side surface, thelight can be reflected from the light-reflecting enclosure 580 to thewavelength conversion layer 540. In another embodiment, thicknesses ofthe light pervious cover layer 570 and the light-reflecting enclosure580 above a side surface of the light-emitting element 520 can besubstantially the same.

FIG. 6 is a cross-sectional view of a light-emitting device 600 inaccordance with another embodiment of the present disclosure. Thelight-emitting device 600 includes a light-emitting element 620, awavelength conversion layer 640, a light pervious element 660, and alight-reflecting enclosure 680. The same part with the embodiments ofFIG. 1 or/and FIG. 4 or/and FIG. 5 can refer to the above-mentioneddescription. As shown in the FIG. 6, in one embodiment, between thelight-reflecting enclosure 680 and a side surface of the light-emittingelement 620 has a distance. In one embodiment, the light-reflectingenclosure 680 surrounds the light-emitting element 620 to form a recessso as to have a side wall 682 and a bottom portion 684. Furthermore,between the side wall 682 and the side surface of the light-emittingelement 620 further includes the wavelength conversion layer 640 and thelight pervious element 660. In one embodiment, the wavelength conversionlayer 640 covers a top surface of the light-emitting element 620 and theside surface thereof, and extends to a portion on the bottom portion 684of the light-reflecting enclosure 680. In another embodiment, the lightpervious element 660 covers the wavelength conversion layer 640 andfills into the interspace between the wavelength conversion layer 640and the side wall 682. Because the light pervious element 660 existsbetween the wavelength conversion layer 640 and the light-reflectingenclosure 680, a portion of light can exit directly from the lateralside of the light-emitting element 620 so as to increase the lightextraction. The light-reflecting enclosure 680 in a direction from thewavelength conversion layer 640 to the electrical pads 650 a, 650 b canbe parallel to the side surface of the light-emitting element 620 orinclude a slanted plane.

It is noted that the foregoing description has been directed to thespecific embodiments of this invention. It will be apparent to thosehaving ordinary skill in the art that other alternatives andmodifications can be made to the devices in accordance with the presentdisclosure without departing from the scope or spirit of the disclosure.In view of the foregoing, it is intended that the present disclosurecovers modifications and variations of this disclosure provided theyfall within the scope of the following claims and their equivalents.

What is claimed is:
 1. A light-emitting device, comprising: alight-emitting element, comprising a top surface, a bottom surface, anda side surface between the top surface and the bottom surface; awavelength conversion layer, covering the top surface, and comprising aplurality of wavelength conversion particles with an equivalent particlediameter D50; a light pervious element, comprising a recess structureand an outer wall, and disposed on the wavelength conversion layer; anda light-reflecting enclosure surrounding the outer wall, wherein the D50is not great than 10 μm, and wherein the recess structure is laterallyoverlapped with the side surface of the light-emitting element and thewavelength conversion layer.
 2. The light-emitting device according toclaim 1, wherein the light pervious element comprises a light perviousadhesive layer and a light pervious substrate.
 3. The light-emittingdevice according to claim 1, wherein the light pervious elementcomprises an outermost surface coplanar with a top of thelight-reflecting enclosure.
 4. The light-emitting device according toclaim 1, wherein the side surface is separated from the light-reflectingenclosure by the light pervious element.
 5. The light-emitting deviceaccording to claim 1, wherein the light-reflecting enclosure comprisinga slant plane.
 6. The light-emitting device according to claim 1,wherein the wavelength conversion layer comprises a quantum dotluminescent material.
 7. The light-emitting device according to claim 1,wherein the wavelength conversion layer comprises an upper section and abottom section, and a difference between an average of particle sizes ofthe wavelength conversion particles in the upper section and an averageof particle sizes of the wavelength conversion particles in the bottomsection is smaller than 10%.
 8. The light-emitting device according toclaim 1, wherein the wavelength conversion layer comprises an extendingportion extending outward the side surface.
 9. The light-emitting deviceaccording to claim 1, wherein the wavelength conversion layer comprisesa transparent binder.
 10. The light-emitting device according to claim9, wherein a weight percentage of the wavelength conversion particles tothe wavelength conversion layer is less than 70%.
 11. The light-emittingdevice according to claim 1, wherein the D50 of the wavelengthconversion particles is in the range of 1 μm to 8 μm.
 12. Thelight-emitting device according to claim 1, wherein the wavelengthconversion layer has an average thickness, and a ratio of the averagethickness to the D50 of the wavelength conversion particles is rangedfrom 6 to
 20. 13. The light-emitting device according to claim 1,wherein the wavelength conversion layer has an average thickness, and aratio of the average thickness to the D50 of the wavelength conversionparticles is ranged from 8 to 15.